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APTGV100H60T3G
Full - Bridge NPT & Trench + Field Stop(R) IGBT Power module
Trench & Field Stop(R) IGBT Q1, Q3: VCES = 600V ; IC = 100A @ Tc = 80C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 90A @ Tc = 80C
13 14
Application
CR3 Q3 11 10
Q1 18 19
CR1
* Solar converter Features
22 23 Q2
7 8 CR4 Q4
26 27
CR2
* Q2, Q4 FAST Non Punch Through (NPT) IGBT - Switching frequency up to 100 kHz - RBSOA & SCSOA rated - Low tail current * Q1, Q3 Trench & Field Stop IGBT(R) - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current * * * * Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring
4 3
29 15
30
31 R1
32 16
Top switches : Trench + Field Stop IGBT(R) Bottom switches : FAST NPT IGBT
28 27 26 25 29 30 23 22 20 19 18 16 15
Benefits Optimized conduction & switching losses Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant * * * *
31 32 2 3 4 7 8 10 11 12
14 13
All multiple inputs and outputs must be shorted together 13/14 ; 15/16 ; 26/27 ; 31/32
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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All ratings @ Tj = 25C unless otherwise specified 1. Top switches 1.1 Top Trench + Field Stop IGBT(R) characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 150C Max ratings 600 150 * 100 * 200 20 340 200A @ 550V Unit V A V W
* Specification of IGBT device but output current must be limited to 75A to not exceed a delta of temperature greater than 30C for the connectors.
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A RG = 3.3 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 100A RG = 3.3 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 100A Tj = 25C RG = 3.3 Tj = 150C Min Typ 6100 390 190 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5 0.44 Max Unit pF
ns
ns
mJ mJ
C/W
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1.2 Top fast diode characteristics
Symbol Characteristic VRRM IRM IF VF trr Qrr RthJC
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 100A IF = 200A IF = 100A IF = 100A VR = 400V di/dt =200A/s
Min 600
Typ
Max 100 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
100 1.6 2 1.3 160 220 290 1530
2 V
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 0.55
C/W
2. Bottom switches 2.1 Bottom Fast NPT IGBT characteristics Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C Max ratings 600 110 90 315 20 416 200A @ 600V Unit V A V W
Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V Tj = 25C VCE = 600V Tj = 125C Tj = 25C VGE =15V IC = 90A Tj = 125C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Typ Max 250 500 2.5 5 150 Unit A V V nA
June, 2007
2.0 2.2 3
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Dynamic Characteristics
Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff RthJC Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Junction to Case Thermal resistance Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE = 15V VBus = 300V IC = 90A Inductive Switching (25C) VGE = 15V VBus = 400V IC = 90A RG = 5 Inductive Switching (125C) VGE = 15V VBus = 400V IC = 90A RG = 5 VGE = 15V Tj = 125C VBus = 400V IC = 90A Tj = 125C RG = 5 Min Typ 4300 470 400 330 290 200 26 25 150 30 26 25 170 40 4.3 mJ 3.5 0.3
C/W
Max
Unit pF
nC
ns
ns
2.2 Bottom diode characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Peak Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 80C IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/s
Min 600
Typ
Max 250 500
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=600V
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
30 1.6 1.9 1.4 85 160 130 700
1.8 V
trr Qrr RthJC
Reverse Recovery Time Reverse Recovery Charge Junction to Case Thermal resistance
ns nC 1.2
C/W June, 2007 4-9 APTGV100H60T3G - Rev 0
3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic R25 Resistance @ 25C B 25/85 T25 = 298.15 K
RT = R25 T: Thermistor temperature 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
Min
Typ 50 3952
Max
Unit k K
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APTGV100H60T3G
4. Package characteristics
Symbol VISOL TJ TSTG TC Torque Wt Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M4
Min 2500 -40 -40 -40 2.5
Typ
Max 150* 125 100 4.7 110
Unit V C N.m g
Tj=175C for Trench & Field Stop IGBT
5. SP3 Package outline (dimensions in mm)
1
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
6. Top switches curves 6.1 Top Trench + Field Stop IGBT(R) typical performance curves
Output Characteristics (VGE=15V) Output Characteristics 200 175 150 IC (A)
TJ=150C TJ = 150C VGE=19V
200 175 150
IC (A)
TJ=25C TJ=125C
125 100 75 50 25 0 0 0.5 1
TJ=25C
100 75 50 25 0
VGE=15V
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
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28
125
VGE=13V
APTGV100H60T3G
200 175 150 125 IC (A) 100 75 50 25 0 5 6 7 8 9 10 11 12 VGE (V) Switching Energy Losses vs Gate Resistance 8
VCE = 300V VGE =15V IC = 100A TJ = 150C TJ=125C TJ=150C TJ=25C
Transfert Characteristics 7
TJ=25C
Energy losses vs Collector Current 6 5 E (mJ) 4 3 2 1 0 0 25 50 75 100 125 150 175 200 IC (A) Reverse Bias Safe Operating Area 250
Eon VCE = 300V VGE = 15V RG = 3.3 TJ = 150C Eoff
6 E (mJ)
Eoff
200 IF (A) 150 100
4
2
Eon
50 0 0 5 10 15 20 25 Gate Resistance (ohms) 30 0
VGE=15V TJ=150C RG=3.3
0
100
200
300 400 VCE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 Thermal Impedance (C/W) 0.4 0.3 0.5 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10 0.9 0.7
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
6.2 Top Fast diode typical performance curves
Forw ard Current vs Forw ard Voltage 300 IF, Forward Current (A) 250
T J=1 75C
200 150 100
T J=1 25C T J=25C
50 0 0.0 0.5 1.0 1.5 2.0
T J=-55C
2.5
3.0
V F, Anode to Cathode Voltage (V)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (C/W) 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse
0.5 0.4 0.3 0.2 0.1 0 0.00001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
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APTGV100H60T3G
7. Bottom switches curves 7.1 Bottom fast NPT IGBT typical performance curves
Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300
350 Ic, Collector Current (A) 300 250 200 150 100 50 0 0 1 2 3 VCE, Collector to Emitter Voltage (V)
Transfer Characteristics
TJ=125C
Ic, Collector Current (A)
250s Pulse Test < 0.5% Duty cycle
TJ=-55C
250 200
250s Pulse Test < 0.5% Duty cycle
TJ=-55C
TJ=25C
TJ=25C
150 100 50 0
TJ=125C
4
0
VCE, Collector to Emitter Voltage (V)
1
2
3
4
300
VGE, Gate to Emitter Voltage (V)
18
250s Pulse Test < 0.5% Duty cycle TJ=-55C
Gate Charge
IC = 90A TJ = 25C VCE=120V VCE=300V
Ic, Collector Current (A)
250 200 150 100 50 0 0
16 14 12 10 8 6 4 2 0 0
VCE=480V
TJ=25C TJ=125C TJ=-55C
1
23456789 VGE, Gate to Emitter Voltage (V)
10
50
100 150 200 250 Gate Charge (nC)
300
350
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Gate to Emitter Volt. 8 7 6 5 4 3 2 1 0 6 10 12 14 VGE, Gate to Emitter Voltage (V) 8 16
Ic=90A Ic=45A TJ = 25C 250s Pulse Test < 0.5% Duty cycle Ic=180A
VCE, Collector to Emitter Voltage (V)
On state Voltage vs Junction Temperature 4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) DC Collector Current vs Case Temperature
Ic=45A 250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=180A Ic=90A
Breakdown Voltage vs Junction Temp. Collector to Emitter Breakdown Voltage (Normalized) 1.20 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (C) Ic, DC Collector Current (A)
140 120 100 80 60 40
0 -50 -25 0 25 50 75 100 125 150
TC, Case Temperature (C)
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APTGV100H60T3G
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns) td(off), Turn-Off Delay Time (ns) 35
VGE = 15V
Turn-Off Delay Time vs Collector Current 250
VGE=15V, TJ=125C
30 25 20 15 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 80
VCE = 400V RG = 5 Tj = 25C VCE = 400V RG = 5
200
150
100
VCE = 400V RG = 5
VGE=15V, TJ=25C
50 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 5
80
tr, Rise Time (ns)
tf, Fall Time (ns)
60
VGE=15V, TJ=125C
60
TJ = 125C
40
40
20
20
TJ = 25C
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150
Turn-On Energy Loss vs Collector Current Eoff, Turn-off Energy Loss (mJ) 8 Eon, Turn-On Energy Loss (mJ) 6 4 2 0 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance
VCE = 400V VGE = 15V TJ= 125C VCE = 400V RG = 5
6 5 4 3 2 1 0
Turn-Off Energy Loss vs Collector Current
VCE = 400V VGE = 15V RG = 5
TJ = 125C
TJ=125C, VGE=15V
TJ=25C, VGE=15V
TJ = 25C
0
25
50
75
100
125
150
ICE, Collector to Emitter Current (A) Reverse Bias Safe Operating Area 250
16 Switching Energy Losses (mJ)
Eon, 180A
IC, Collector Current (A)
Eoff, 180A
12
200 150 100 50 0 0 200 400 600 800 VCE, Collector to Emitter Voltage (V)
Eoff, 90A
8
Eon, 90A Eoff, 45A
Eon, 45A
0 0 10 20 30 40 50 Gate Resistance (Ohms)
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APTGV100H60T3G
Capacitance vs Collector to Emitter Voltage Fmax, Operating Frequency (kHz) 10000
Cies
200 160 120 80 40 0
Operating Frequency vs Collector Current
VCE = 400V D = 50% RG = 5 TJ = 125C TC = 75C
C, Capacitance (pF)
ZVS
1000
Coes Cres
ZCS
Hard switching
100 0 10 20 30 40 50 VCE, Collector to Emitter Voltage (V)
20
40 60 80 100 IC, Collector Current (A)
120
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.5 0.3 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 0.9 0.7
0.1 0.05 0 0.00001
7.2 Bottom diode typical performance curves
Forw ard Current vs Forw ard Voltage 80 IF, Forward Current (A) 70 60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 V F, Anode to Cathode Voltage (V)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 1.4 Thermal Impedance (C/W) 1.2 1 0.8 0.6 0.4 0.2 0 0.00001 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.9 0.7 0.5
T J=1 25C
T J=25C
T J=-55C
0.01
0.1
1
10
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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Rectangular Pulse Duration (Seconds)
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